• International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low • • • • • • • • • •.

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ± 100 TJ = 2.

IXFT60N20

IXFT60N20F

IXFT60N25Q

IXFT60N50P3

IXFT60N65X2HV

IXFT66N20Q

IXFT6N100F

IXFT10N100

IXFT120N15P

IXFT12N100

IXFT12N100F

IXFT12N50F

IXFT13N100